Sr Principal GaN Modeling Engineer

We are seeking a highly skilled and experienced RF GaN Transistor Modeling Engineer to join our Modeling Team. The successful candidate will be responsible for the analysis, and development of accurate and predictive compact and behavioral models for Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) used in high-frequency and high-power applications.

Requirements

• Master's or Ph.D. in Electrical Engineering, Applied Physics, or a related field with a focus on semiconductor devices
• 15+ years of experience in semiconductor device characterization and modeling, specifically with RF GaN HEMT technologies
• Deep theoretical and practical understanding of GaN device physics and materials science
• Proficiency with RF characterization equipment (network analyzers, spectrum analyzers, load-pull systems, probe stations)
• Expertise in industry-standard RF simulation and modeling tools (Keysight ADS, Cadence AWR, TCAD tools, etc.)
• Strong programming and data analysis skills (e.g., Python, MATLAB, C++) for automation and data interpretation

Benefits

• Generous Paid Time Off
• 401k Matching
• Retirement Plan
• Tuition Reimbursement
• Relocation Assistance